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509 GHz HBT

Posted on November 4, 2003 by ypeng14@illinois.edu

Illinois researchers create world’s fastest transistor: UIUC News Bureau November 2003 Forbes Magazine Lists HSIC’s high speed InP transistor as a nanotech breakthrough of 2003!

This entry was posted in November 2003 by ypeng14@illinois.edu. Bookmark the permalink.
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