Congratulations to Dr. Huiming Xu for winning Best Paper at the Compound Semiconductor IC Symposium (CSICS) 2014 for his paper titled “Advanced Process and Modeling on 600+ GHz Emitter Ledge Type-II GaAsSb/InP DHBT”. This paper addresses the problem of surface recombination in the extrinsic base region of a DHBT which limits the current gain and scalability of the device. Using an AlInP ledge to passivate the extrinsic base, the current gain was improved by 50%. The best performance device showed fT/fMAX = 480/620 GHz and β=24.
