Former HSIC students treated Prof. Feng to a wonderful dinner in Taipei during his recent visit to Taiwan.
From left to right: Mr. Michael Liu (UIUC), Prof. Henry H. C. Kuo (NCTU), Prof. Milton Feng (UIUC), Dr. Zhuang Tan (Shanghai), Prof. J. J. Huang (NTU), Prof. Wayne C. H. Wu (NTU).
HSIC graduate researcher Michael Liu presented HSIC’s latest work on state-of-the-art VCSEL technology at the 2016 Optical Fiber Communication Conference and Exhibition (OFC). The work, done in collaboration with Prof. Milton Feng, Prof. Nick Holonyak, Jr., and graduate researcher Curtis Wang, showed record-breaking 57 Gbps error-free data transmission at room temperature and 50 Gbps at 85 degrees Celsius.
Read the full news article here:
Record-speed data transmission could make big data more accessible
Prof. Milton Feng and graduate students Curtis Wang and Junyi Qiu (pictured) along with Prof. Nick Holonyak, Jr. have discovered the phenomenon of intra-cavity photon-assisted tunneling (ICpaT) in the Transistor Laser. This phenomenon is unique to the Transistor Laser with its three-port structure and electrical/optical ouput, where photon absorption in the collector promotes a very quick tunneling process that serves as a direct-voltage-modulation scheme. Under this scheme, the Transistor Laser can be modulated down to the femtosecond range, much faster than direct-current-modulated diode lasers.
This work is sponsored by the Air Force Office of Scientific Research.
Read the full news article here:
Light helps the transistor laser switch faster
Prof. Milton Feng was in new Orleans for CSICS 2015 to accept the CSICS 2014 Best paper Award for the paper titled “Advanced Process and Modeling on 600+ GHz Emitter Ledge Type-II GaAsSb/InP DHBT”. Here he is pictured with co-author Dr. Barry Wu (Keysight Technologies) and Symposium Chair Dr. Charles Campbell (Triquint).
Congratulations to Dr. Huiming Xu for winning Best Paper at the Compound Semiconductor IC Symposium (CSICS) 2014 for his paper titled “Advanced Process and Modeling on 600+ GHz Emitter Ledge Type-II GaAsSb/InP DHBT”. This paper addresses the problem of surface recombination in the extrinsic base region of a DHBT which limits the current gain and scalability of the device. Using an AlInP ledge to passivate the extrinsic base, the current gain was improved by 50%. The best performance device showed fT/fMAX = 480/620 GHz and β=24.
Congratulations to Curtis Wang on winning the prestigious DoD NDSEG fellowship! We look forward to his work on the transistor laser and VCSEL. See the department article here for more details: http://illinois.edu/lb/article/1076/92414
In 1976, Prof. Feng was a graduate student for G.E. Stillman, where he conducted LPE growth and fabricated 1.3 um InGaAsP/InP detectors. Our department found a photo of him working hard:
Congratulations to Professor Feng and all past and current members of the HSIC group for this award! Overall, the HSIC group has been awarded 16 patents and has published over 50 papers on the light-emitting transistor and transistor laser. Professor Feng would like to thank all former and current HSIC group members for their efforts.
Congratulations to Dr. Fei Tan, Mong-Kai Wu, and Michael Liu for their spectacular efforts in developing an oxide-confined VCSEL that can transmit 40 Gb/s error free data rate. This device is the fastest directly modulated laser (not using a peaked driver circuit) in the United States