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We are the High Speed Integrated Circuits Group,a research group with the University of Illinois at Urbana-Champaign. We design and build cutting edge devices and circuits for the next generation of high-frequency applications.

Transistor Laser is in the News

Two great new articles on the transistor laser were published this month!

From Compound Semiconductor: “The Transistor Laser:A Radical,Revolutionary Device”

and from Optics and Photonics News:“The Metamorphosis of a Transistor into a Laser”

HKUST Webcast Lecture on Transistor Laser

Professor Feng gave an invited lecture on the transistor laser at the Hong Kong University of Science and Technology’s Institute for Advanced Study.  He covers the history of its invention,the basic physics of operation,current research results,and future expectations for the novel device.

See the webcast here:http://videochannel.ust.hk/Watch.aspx?Video=1C252E67AE1D1E52

Milton Feng Endowed Scholarship Unveiled at 60th Birthday

Milton receives a plaque commemorating the creation of the Milton Feng Endowed Scholarhship

Milton receives a plaque commemorating the creation of the Milton Feng Endowed Scholarhship

At Professor Feng’s 60th birthday party on July 16th,2010,Richard Chan unveiled the Milton Feng Endowed Scholarship.  The scholarship was formed through contributions by friends,colleagues,and former students. It was a fitting end to an evening of symposium-style talks,dinner,drinks,and general merrymaking.

Please contact Eric Iverson to inquire about pictures of the event.

HSIC Group Revises Kirchoff’s Law

After discovering a flaw in the 160-year-old circuit theory,Han Wui Then’s Transistor Laser research has revised Kirchoff’s current law to account for optical generation/recombination.  His research enables a simple and intuitive way to view the relationship between electrons and photons in direct semiconductors.

“Transistor-laser breaks Kirchhoff’s Law,rewrites textbooks”:EE Times

“Transistor laser rewrites the rules”:Optics.org

“Redefining Electrical Current Law With the Transistor Laser”:Science Daily

H. Then,M. Feng,and N. Holonyak Jr,“Physics of base charge dynamics in the three port transistor laser,”Applied Physics Letters,  vol. 96,p. 113509,2010.

H. Then,M. Feng,and N. Holonyak Jr,“Microwave circuit model of the three-port transistor laser,”Journal of Applied Physics,  vol. 107,p. 094509,2010.

New Course on LEDs and Solar Cells

In addition to ECE 447 (Active Microwave Circuit Design),Professor Feng will be joint-teaching a course with Professor K.Y. Cheng.  This new course will focus on the physical operation and Green Energy applications of LEDs and Solar Cells.

This will be a great opportunity to learn about these two important devices,from two men that worked with some of the most influential inventors in the field of optoelectronic devices.

Course webpage coming soon for ECE 498MF (Semiconductor LEDs and Solar Cells). For now,information can be found on the ECE department summary for the course

HSIC Group Breaks High Speed Light Modulation Record — Twice

“Scientists break high speed light modulation record —Twice”:Science Daily

“Han Wui Thenworks to create faster,cheaper network technology”: Illinois ECE Headline News

Publication download link: Applied Physics Letters

“4.3 GHz optical bandwidth light emitting transistor”
G. Walter,C. H. Wu,H. W. Then,M. Feng,and N. Holonyak,Jr.,Appl. Phys. Lett. 94,241101  (2009)

“Holy Grail” of a Terahertz Transistor Finally Within Reach

feng_milton_b

World’s fastest transistor operates at blinding speed:New Scientist

World’s fastest transistor approaches goal of terahertz device:ECE News Bureau

Applied Physics Letters Names Transistor Laser Top 5 Paper of Past 43 Years

tlaserIllinois research team fabricates transistor laser:compoundsemiconductor.net

UI building a better transistor: News-Gazette November 2004

New transistor laser could lead to faster signal processing: UIUC News Bureau November 2004

America Institute of Physics selected “Room Temperature CW Operation of Transistor Laser”as top 5 paper published in the 43 years history of Applied Physics Letter in 2006

Light Emitting Transistor

509 GHz HBT

  • Illinois researchers create world’s fastest transistor: UIUC News Bureau November 2003
  • Forbes Magazine Lists HSIC’s high speed InP transistor as a nanotech breakthrough of 2003!