We are the High Speed Integrated Circuits Group, a research group with the University of Illinois at Urbana-Champaign. We design and build cutting edge devices and circuits for the next generation of high-frequency applications.

HSIC at CSICS 2015

CSICS 2014 Best Paper nr2

Prof. Milton Feng was in New Orleans for the 2015 Compound Semiconductor Integrated Circuits Symposium (CSICS) to accept the CSICS 2014 Best Paper Award for the paper “Advanced Process and Modeling on 600+ GHz Emitter Ledge Type-II GaAsSb/InP DHBT”.

Pictured is him accepting the award along with co-author Dr. Barry Wu (left) from Symposium Chair Dr. Charles Campbell (middle).

Congratulations to Dr. Huiming Xu: Best Paper at CSICS 2014

Congratulations to Dr. Huiming Xu for winning Best Paper at the Compound Semiconductor IC Symposium (CSICS) 2014 for his paper titled “Advanced Process and Modeling on 600+ GHz Emitter Ledge Type-II GaAsSb/InP DHBT”. This paper addresses the problem of surface recombination in the extrinsic base region of a DHBT which limits the current gain and scalability of the device. Using an AlInP ledge to passivate the extrinsic base, the current gain was improved by 50%. The best performance device showed fT/fMAX = 480/620 GHz and β=24.










Find the award-winning article here: Advanced Process and Modeling on 600+ GHz Emitter Ledge Type-II GaAsSb/InP DHBT

Congrats to Curtis Wang on NDSEG fellowship

wangndseg Congratulations to Curtis Wang on winning the prestigious DoD NDSEG fellowship! We look forward to his work on the transistor laser and VCSEL. See the department article here for more details: http://illinois.edu/lb/article/1076/92414

Link to the Past

In 1976, Prof. Feng was a graduate student for G.E. Stillman, where he conducted LPE growth and fabricated 1.3 um InGaAsP/InP detectors. Our department found a photo of him working hard:

Donations for Milton Feng Scholarship

Attention former graduate students:

Donations are open for the Milton Feng Scholarship in ECE, founded by former alumnus Rich Chan.  You can donate through the department by going to: http://www.ece.illinois.edu/donate/online.asp


Optical Society of America Awards R.W. Wood Prize to Prof. Milton Feng

WPOD3759Congratulations to Professor Feng and all past and current members of the HSIC group for this award!  Overall, the HSIC group has been awarded 16 patents and has published over 50 papers on the light-emitting transistor and transistor laser.

Professor Feng would like to thank all former and current HSIC group members for their efforts.

See the OSA announcement here

850nm Oxide-Confined VCSEL with 40 Gb/s Error Free Data Transmission

Congratulations to Dr. Fei Tan, Mong-Kai Wu, and Michael Liu for their spectacular efforts in developing an oxide-confined VCSEL that can transmit 40 Gb/s error free data rate.  This device is the fastest directly modulated laser (not using a peaked driver circuit) in the United States.40G

50th Anniversary of the LED

ieee_coverThe October 2013 issue of Proc. IEEE features the 50th anniversary of the LED. Take a look at this issue, featuring articles by great Illinois alumni like Nick Holonyak, George Craford, Russ Dupuis, Fred Kish, John Dallesassee, Dennis Deppe, John Rossi, Joy Laskar, Han Wui Then, and Milton Feng.  Of course other non-Illinois alumni are featured as well (Kroemer, Alferov, Iga, Kumagai, Nakamura), and this issue is chock-full of the illustrious history of light-emitting semiconductors. Highly recommended!

Congratulations to Mong-Kai Wu for Cover of Applied Physics Letters

Congratulations to Mong-Kai Wu for his paper, “Voltage modulation of a vertical cavity transistor laser via intra-cavity photon-assisted tunneling,” which was placed on the cover of Volume 101, Issue 8 of Applied Physics Letters.

Congratulations to Donald Cheng: Best Student Paper at CSMANTECH

Congratulations to Dr. Donald Cheng for winning Best Student Paper at CSMANTECH 2011 for his paper titled, “Type-II DHBTs Microwave Characterization and Metallization Issues”.  This paper described the problem of emitter-to-base shorts during the fabrication of Type-II submicron DHBTs.  He presented designs of experiment to identify the problem, as well as the solution to the problem.  Ultimately, the BE shorts were minimized, and devices were fabricated with room temperature current gain cutoff frequency (fT) up to 680 GHz.

Find the award announcement here:  http://www.csmantech.org/Conference%20Information/paperawards.html
Find the award-winning article here: Type-II DHBTs Microwave Characterization and Metallization Issues

Best of luck to our friend Donald at Infinera Corporation.